new tsop322../tsop324.. document number 81747 rev. 1.0, 08-aug-07 vishay semiconductors www.vishay.com 1 ir receiver modules for remote control systems description the tsop32#.. series are miniaturized receivers for infrared remote control systems. a pin diode and a preamplifier are assembled on a lead frame, the epoxy package acts as an ir filter. the demodulated output signal can be directly decoded by a microprocessor. the tsop322.. is compatible with all common ir remote control data formats. the tsop324.. is optimized to suppress almost all spurious pulses from energy saving fluorescent lamps but will al so suppress some data signals. this component has not been qualified according to automotive specifications. features ? very low supply current ? photo detector and preamplifier in one package ? internal filter for pcm frequency ? improved shielding against emi ? supply voltage: 2.5 v to 5.5 v ? improved immunity against ambient light ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec ? insensitive to supply voltage ripple and noise mechanical data pinning: 1 = out, 2 = v s , 3 = gnd product matrix parts table block diagram application circuit standard applications very noisy enviroments tsop322.. tsop324.. part carrier frequency tsop32#30 30 khz tsop32#33 33 khz tsop32#36 36 khz tsop32#38 38 khz tsop32#40 40 khz tsop32#56 56 khz 16672 1 2 3 30 k 2 3 1 v s out demo- g n d pass ag c inp u t pi n band d u lator control circ u it 16 8 35 ir transmitter with tsalxxxx c gnd tsop.... circuit v s out v o 19267 n o external com p onents are re q u ired e3
www.vishay.com 2 document number 81747 rev. 1.0, 08-aug-07 new tsop322../tsop324.. vishay semiconductors absolute maximum ratings t amb = 25 c, unless otherwise specified electrical and opti cal characteristics t amb = 25 c, unless otherwise specified parameter test condition symbol value unit supply voltage (pin 2) v s - 0.3 to + 6.0 v supply current (pin 2) i s 3ma output voltage (pin 1) v o - 0.3 to (v s + 0.3) v output current (pin 1) i o 5ma junction temperature t j 100 c storage temperature range t stg - 25 to + 85 c operating temperature range t amb - 25 to + 85 c power consumption (t amb 85 c) p tot 10 mw soldering temperature t 10 s, 1 mm from case t sd 260 c parameter test condition symbol min ty p. max unit supply current (pin 2) e v = 0, v s = 3.3 v i sd 0.27 0.35 0.45 ma e v = 40 klx, sunlight i sh 0.45 ma supply voltage v s 2.5 5.5 v transmission distance e v = 0, test signal see fig. 1, ir diode tsal6200, i f = 250 ma d45m output voltage low (pin 1) i osl = 0.5 ma, e e = 0.7 mw/m 2 , test signal see fig. 1 v osl 100 mv minimum irradiance pulse width tolerance: t pi - 5/f o < t po < t pi + 6/f o , test signal see fig. 1 e e min 0.1 0.25 mw/m 2 maximum irradiance t pi - 5/f o < t po < t pi + 6/f o , test signal see fig. 1 e e max 30 w/m 2 directivity angle of half transmission distance ? 1/2 45 deg
new tsop322../tsop324.. document number 81747 rev. 1.0, 08-aug-07 vishay semiconductors www.vishay.com 3 typical characteristics t amb = 25 c, unless otherwise specified figure 1. output active low figure 2. pulse length and sens itivity in dark ambient figure 3. output function e e t t pi * t * t pi 10/fo is recommended for optimal f u nction v o v oh v ol t 16110 optical test si g nal (ir diode tsal6200, i f = 0.4 a, 30 p u lses, f = f 0 , t = 10 ms) output si g nal t d 1) t po 2) 1) 7/f 0 < t d < 15/f 0 2) t pi - 5/f 0 < t po < t pi + 6/f 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0. 8 0.9 1 0.1 1 10 100 1000 10000 e e - irradiance (m w /m2) t po - o u tp u t p u lse w idth (ms) inp u t b u rst length = 950 nm, optical test signal, fig. 1 o u tp u t p u lse w idth 20743 e e t v o v oh v ol t 600 s 600 s t = 60 ms t on t off 94 8 134 optical test si g nal output si g nal , (see fig. 4) figure 4. output pulse diagram figure 5. frequency dependence of responsivity figure 6. sensitivity in bright ambient 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0. 8 0.1 1 10 100 1000 10000 e e - irradiance (m w /m2) t on , t off - o u tp u t p u lse w idth (ms) 20744 = 950 nm, optical test signal, fig. 3 t on t off 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 0.7 0.9 1.1 1.3 f/f 0 - relati v e fre qu ency 16925 f = f 0 5 % f (3 db) = f 0 /10 e /e - rel. responsi v ity e min e 0 0.5 1 1.5 2 2.5 3 3.5 4 0.01 0.1 1 10 100 e e - am b ient dc irradiance ( w /m2) e emin - threshold irradiance (m w /m2) correlation w ith am b ient light so u rces: 10 w /m2 = 1.4 klx (std. ill u m. a, t = 2 8 55 k) 10 w /m2 = 8 .2 klx (daylight, t = 5900 k) w a v elength of am b ient ill u mination: = 950 nm 20745
www.vishay.com 4 document number 81747 rev. 1.0, 08-aug-07 new tsop322../tsop324.. vishay semiconductors figure 7. sensitivity vs. supply voltage disturbances figure 8. sensitivity vs. el ectric field disturbances figure 9. max. envelope duty cycle vs. burst length 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0. 8 0.9 1 1 10 100 1000 v s rms - ac v oltage on dc s u pply v oltage (m v ) 20746 e e min - threshold irradiance (m w /m2) f = f o f = 20 khz f = 30 khz f = 100 hz f = 10 khz 0 50 100 150 200 250 300 350 400 450 500 0 500 1000 1500 2000 2500 3000 f - emi fre qu ency (mhz) e - max. field strength ( v /m) 20747 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0. 8 0.9 1 0204060 8 0100120 b u rst length (n u m b er of cycles/ bu rst) max. en v elope d u ty cycle f = 3 8 khz, e e = 2 m w /m2 tsop322.. tsop324.. 20775 figure 10. sensitivity vs. ambient temperature figure 11. relative spectral sensitivity vs. wavelength figure 12. directivity 0 0.02 0.04 0.06 0.0 8 0.1 0.12 0.14 0.16 0.1 8 0.2 - 30 - 10 10 30 50 70 90 t am b - am b ient temperat u re (c) e e min - threshold irradiance (m w /m2) 20749 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 750 8 50 950 1050 1150 - w a v elength (nm) 16919 s ( ) - relati v e spectral sensiti v ity rel 96 12223p2 0.4 0.2 0 0.2 0.4 0.6 0.6 0.9 0 30 10 20 40 50 60 70 8 0 1.0 0. 8 0.7 d rel - relati v e transmission distance
new tsop322../tsop324.. document number 81747 rev. 1.0, 08-aug-07 vishay semiconductors www.vishay.com 5 suitable data format the tsop32#.. series is designed to suppress spurious output pulses due to noise or disturbance signals. data and disturbance signals can be distinguished by the devi ces according to carrier frequency, burst length and envelope duty cycle. the data signal should be close to the band-pass center frequency (e.g. 38 khz) and fulfill the conditions in the table below. when a data signal is applied to the tsop32#.. in the presence of a disturbance signal, the sensitivity of the receiver is reduced to insure that no spurious pulses are present at the output. some examples of disturbance signals which are suppressed are: ? dc light (e.g. from tungsten bulb or sunlight) ? continuous signals at any frequency ? strongly or weakly modulated noise from fluorescent lamps with electronic ballasts (see figure 14 or figure 15). for data formats with short bursts please see the data sheet for tsop321../tsop323.. figure 13. sensitivity vs. supply voltage 0 0.02 0.04 0.06 0.0 8 0.1 0.12 0.14 0.16 0.1 8 0.2 23456 v s - s u pply v oltage ( v ) e e min - sensiti v ity (m w /m2) 20750 3.5 4.5 5.5 2.5 figure 14. ir signal from fluorescent lamp with low modulation figure 15. ir signal from fluorescent lamp with high modulation 0101520 time (ms) 16920 ir signal ir signal from fl u orescent lamp w ith lo w mod u lation 5 0101520 time (ms) 16921 ir signal ir signal from fl u orescent lamp w ith high mod u lation 10 tsop322.. tsop324.. minimum burst length 10 cycles/burst 10 cycles/burst after each burst of length a gap time is required of 10 to 70 cycles 10 cycles 10 to 35 cycles 10 cycles for bursts greater than a gap time in the data stream is needed of 70 cycles > 4 x burst length 35 cycles > 10 x burst length maximum continuous short bursts/second 1800 1500 compatible to nec code yes yes compatible to rc5/rc6 code yes yes compatible to sony code yes no compatible to thomson 56 khz code yes yes compatible to mitsubishi code (38 khz, preburst 8 ms, 16 bit) yes no compatible to sharp code yes yes suppression of interference from fluorescent lamps most common disturbance signals are suppressed even extreme disturbance signals are suppressed
www.vishay.com 6 document number 81747 rev. 1.0, 08-aug-07 new tsop322../tsop324.. vishay semiconductors package dimensions in millimeters 13655
new tsop322../tsop324.. document number 81747 rev. 1.0, 08-aug-07 vishay semiconductors www.vishay.com 7 ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releas es of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operat ing parameters must be validated for each customer application by the customer. should the buyer use vish ay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vis hay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
legal disclaimer notice vishay document number: 91000 www.vishay.com revision: 08-apr-05 1 notice specifications of the products displayed herein are subjec t to change without notice. vishay intertechnology, inc., or anyone on its behalf, assume s no responsibility or liability fo r any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. except as provided in vishay's terms and conditions of sale for such products, vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and /or use of vishay products including liab ility or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyrigh t, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify vishay for any damages resulting from such improper use or sale.
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